SKU:9113799963

LaAlO3, (100) orn. EPI polishing 3" x 0.5mm wafer 1 SP - LAOa76D05C1US

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Regular price $811.09 USD
Regular price $841.09 USD Sale price $811.09 USD
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Ships within 48 hours · Estimated delivery Jul 25 - Jul 30

Description

LaAlO3, (100) orn. EPI polishing 3" x 0.5mm wafer 1 SP - LAOa76D05C1USLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 3" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100) +

Growth Method:Chemical Vapor Deposition (CVD) Technique

001 mm (50 millionths of an inch)

electrode material shall face the window

Shipping Size 48"x40"x32" Shipping Weight 320 lbs

Se-KTQ-150

07 Mn % 66

dh a / dT :   8

Edge Orientation:   <001> +/-1 Deg with 16 mm Length

SS304 steel Structure with internal Silver-Clad surface treatment ensures high electrical conductivity and good corrosion protection

Silicon Carbide

8mm Width Aluminum Tab with Adhesive Polymer Tap as Positive Terminal for Pouch Cell

Dimension: Diameter 3mm

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Exchange/Return Notes
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